| Autor: |
Christian Roemer, Ghader Darbandy, Mike Schwarz, Jens Trommer, Andre Heinzig, Thomas Mikolajick, Walter M. Weber, Benjamin Iniguez, Alexander Kloes |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 10, Pp 416-423 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2021.3136981 |
| Popis: |
A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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