| Autor: |
Ryota Ochi, Erika Maeda, Toshihide Nabatame, Koji Shiozaki, Taketomo Sato, Tamotsu Hashizume |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 10, Iss 6, Pp 065215-065215-5 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0012687 |
| Popis: |
Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high κ gate dielectric. The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, followed by a post-deposition annealing at 800 °C. The HfSiOx-gate HEMT showed good transfer characteristics with a high transconductance expected from its κ value and a subthreshold swing of 71 mV/decade. For the metal–oxide-semiconductor (MOS) HEMT diode, we observed excellent capacitance–voltage (C–V) characteristics with negligible frequency dispersion. The detailed C–V analysis showed low state densities on the order of 1011 cm−2 eV−1 at the HfSiOx/AlGaN interface. In addition, excellent operation stability of the MOS HEMT was observed at high temperatures up to 150 °C. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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