| Autor: |
Yingjia Liu, Xingdan Sun |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Magnetochemistry, Vol 8, Iss 9, p 101 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2312-7481 |
| DOI: |
10.3390/magnetochemistry8090101 |
| Popis: |
Transition metal phosphorous trichalcogenides (MPX3) have been extensively investigated as photodetectors due to their wide-bandgap semiconductor properties. However, the research involved in the photoresponses at low temperatures remain blank. Here, hexagonal boron nitride (hBN)-encapsulated NiPS3 field effect transistors were fabricated by using the dry-transfer technique, indicating strong stability under atmospheric environments. The NiPS3 devices with the thickness of 10.4 nm, showed broad photoresponses from near-infrared to ultraviolet radiation at the liquid nitrogen temperature, and the minimum of rise time can reach 30 ms under the wavelength of 405 nm. The mechanism of temperature-dependent photoresponses can be deduced by competition between Schottky barrier height and thermal fluctuation. Our findings provide insights into superior phototransistors in few-layered NiPS3 for ultrasensitive light detection. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
