| Autor: |
Berg Dodson, Ryan Goul, Angelo Marshall, Aafiya, Kevin Bray, Dan Ewing, Michael Walsh, Judy Z Wu |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Nano Express, Vol 5, Iss 2, p 025001 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2632-959X |
| DOI: |
10.1088/2632-959X/ad34a5 |
| Popis: |
Ultrathin (sub-2 nm) Al _2 O _3 /MgO memristors were recently developed using an in vacuo atomic layer deposition (ALD) process that minimizes unintended defects and prevents undesirable leakage current. These memristors provide a unique platform that allows oxygen vacancies (V _O ) to be inserted into the memristor with atomic precision and study how this affects the formation and rupture of conductive filaments (CFs) during memristive switching. Herein, we present a systematic study on three sets of ultrathin Al _2 O _3 /MgO memristors with V _O -doping via modular MgO atomic layer insertion into an otherwise pristine insulating Al _2 O _3 atomic layer stack (ALS) using an in vacuo ALD. At a fixed memristor thickness of 17 Al _2 O _3 /MgO atomic layers (∼1.9 nm), the properties of the memristors were found to be affected by the number and stacking pattern of the MgO atomic layers in the Al _2 O _3 /MgO ALS. Importantly, the trend of reduced low-state resistance and the increasing appearance of multi-step switches with an increasing number of MgO atomic layers suggests a direct correlation between the dimension and dynamic evolution of the conducting filaments and the V _O concentration and distribution. Understanding such a correlation is critical to an atomic-scale control of the switching behavior of ultrathin memristors. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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