Forming of 4НSiC p–i–n-diodes mesastructures by the ion-plasmous etching method

Autor:	Boltovets M. S., Borisenko A. G., Ivanov V. N., Fedorovich О. А., Krivutsa V. A., Polozov B. P.
Jazyk:	English<br />Russian
Rok vydání:	2009
Předmět:	p–i–n-diode 4NSiC silicon carbide ion-plasma etching silicon etching mesastructure diode chip Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 45-48 (2009)
Druh dokumentu:	article
ISSN:	2225-5818
Popis:	The results of research and optimization of 4НSiC p–i–n-diodes mesastructures manufacturing method are presented as well as analysis of current-voltage characteristics and switching characteristics of p–i–n-diodes in the 25—500°C temperature range.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/795bb620960243d2aca180b847ebf9a5 Zobrazit plný text záznamu View record in DOAJ