Comparative studies of the strength properties of germanum and silicon single crystals
| Autor: | A.I. Ivanova, P.A. Svesnikov, K.A. Marinicheva, K.A. Gugutsidze, A.D. Vasilev, S.A. Tretiakov, A.Yu. Karpenkov |
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| Jazyk: | ruština |
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, Iss 14, Pp 120-131 (2022) |
| Druh dokumentu: | article |
| ISSN: | 2226-4442 2658-4360 |
| DOI: | 10.26456/pcascnn/2022.14.120 |
| Popis: | In this paper, we present the results of microhardness tests performed by Vickers indentation of germanium and silicon single crystals. It’s shown that in the investigated samples there is a dependence of microhardness on the crystallographic directions and the nature of the alloying impurity. Microhardness anisotropy coefficients are calculated: for germanium KII=1,2 and for silicon KII=1,3. The analysis of high-temperature annealing influence on microhardness value of germanium and silicon crystals is carried out. It has been established, that the microhardness of Ge(111) crystals grows on 12% after annealing at 550°С, the further thermal processing of germanium crystals at T=650°С considerably changes the structure and surface relief which contribute to a decrease in microhardness values. It is shown that the microhardness of silicon crystals increases by 10% after annealing at 750°C, further annealing to T=850°C leads to a decrease in microhardness. The surfaces of single crystals after high-temperature annealing have been studied; it has been established that thermal treatment at T≈0.6 Tm (Tm – the melting temperature of the single crystal) leads to the appearance of defects and a tenfold increase in the maximum height of the surface profile (from 10-12 nm to 100-200 nm). |
| Databáze: | Directory of Open Access Journals |
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