| Autor: |
Quentin Gaimard, Guy Aubin, Kamel Merghem, Michel Krakowski, Olivier Parillaud, Sylvain Barbay, Abderrahim Ramdane |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
IEEE Photonics Journal, Vol 11, Iss 1, Pp 1-5 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
1943-0655 |
| DOI: |
10.1109/JPHOT.2018.2886460 |
| Popis: |
We report on a mode locked semiconductor laser for high-power pulse generation in the 810-nm waveband. This is based on a novel GaAsP/GaInP single quantum-well structure, with Aluminum-free active region. Average output powers higher than 40 mW are reported in narrow ridge two-section devices. A 1.65-mm-long laser with 70 μm saturable absorber yields a stable mode locked regime at a 23-GHz repetition rate as evidenced by a record low RF linewidth of 75 kHz over a wide range of gain currents. Other laser dynamics are also reported at lower frequencies. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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