Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics

Autor:	R. Marrakh, A. Bouhdada
Jazyk:	angličtina
Rok vydání:	2001
Předmět:	Hot-carrier-injection Stress time Drain current Transconductance MOSFET. Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Active and Passive Electronic Components, Vol 24, Iss 3, Pp 187-199 (2001)
Druh dokumentu:	article
ISSN:	0882-7516 1563-5031
DOI:	10.1155/2001/18731
Popis:	In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects generated during stress time are simulated by a spatio-temporal gaussian distribution. The parasitic source and drain resistances are included. We also investigate the impact of the interface charge density, generated during stress, on the transconductance. Simulation results show a significant degradation of the drain current versus stress time.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/a78955e5dcbd465c9d9ca7d9dc40db4e Zobrazit plný text záznamu Plný text View record in DOAJ