Interfacial Properties of Anisotropic Monolayer SiAs Transistors

Autor: Feihu Zou, Yao Cong, Weiqi Song, Haosong Liu, Yanan Li, Yifan Zhu, Yue Zhao, Yuanyuan Pan, Qiang Li
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Nanomaterials, Vol 14, Iss 3, p 238 (2024)
Druh dokumentu: article
ISSN: 2079-4991
DOI: 10.3390/nano14030238
Popis: The newly prepared monolayer (ML) SiAs is expected to be a candidate channel material for next-generation nano-electronic devices in virtue of its proper bandgap, high carrier mobility, and anisotropic properties. The interfacial properties in ML SiAs field-effect transistors are comprehensively studied with electrodes (graphene, V2CO2, Au, Ag, and Cu) by using ab initio electronic structure calculations and quantum transport simulation. It is found that ML SiAs forms a weak van der Waals interaction with graphene and V2CO2, while it forms a strong interaction with bulk metals (Au, Ag, and Cu). Although ML SiAs has strong anisotropy, it is not reflected in the contact property. Based on the quantum transport simulation, ML SiAs forms n-type lateral Schottky contact with Au, Ag, and Cu electrodes with the Schottky barrier height (SBH) of 0.28 (0.27), 0.40 (0.47), and 0.45 (0.33) eV along the a (b) direction, respectively, while it forms p-type lateral Schottky contact with a graphene electrode with a SBH of 0.34 (0.28) eV. Fortunately, ML SiAs forms an ideal Ohmic contact with the V2CO2 electrode. This study not only gives a deep understanding of the interfacial properties of ML SiAs with electrodes but also provides a guide for the design of ML SiAs devices.
Databáze: Directory of Open Access Journals