| Autor: |
Novosyadlyi S. P., Vivcharuk V. M. |
| Jazyk: |
English<br />Russian |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3, Pp 35-39 (2009) |
| Druh dokumentu: |
article |
| ISSN: |
2225-5818 |
| Popis: |
The superthin functional layers of MOS-transistors require qualitative isolation of active elements. The new method of formation of epitaksial structures for technology «silicon - on-isolator» is offered on the basis of porous silicon. It will allow to form three kinds of transistors — bipolar, SМОS, DМОS. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
