| Autor: |
Dan Shan, Menglong Wang, Daoyuan Sun, Yunqing Cao |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Discover Nano, Vol 18, Iss 1, Pp 1-9 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2731-9229 |
| DOI: |
10.1186/s11671-023-03893-7 |
| Popis: |
Abstract Various doping concentrations of boron (B)-doped germanium nanocrystal (Ge NC) films were prepared using the plasma-enhanced chemical vapor deposition (PECVD) technique followed by thermal annealing treatment. The electronic properties of B-doped Ge NCs films combined with the microstructural characterization were investigated. It is worthwhile mentioning that the Hall mobilities $${\mu }_{\mathrm{Hall}}$$ μ Hall of Ge NCs films were enhanced after B doping and reached to the maximum of 200 cm2 V−1, which could be ascribed to the reduction in surface defects states in the B-doped films. It is also important to highlight that the temperature-dependent mobilities $${\mu }_{\mathrm{H}}(T)$$ μ H ( T ) exhibited different temperature dependence trends in the Ge NCs films before and after B doping. A comprehensive investigation was conducted to examine the distinct carrier transport properties in B-doped Ge NC films, and a detailed discussion was presented, focusing on the scattering mechanisms involved in the transport process. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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