| Autor: |
Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 11, Pp 15-21 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2022.3224206 |
| Popis: |
In this study, we experimentally demonstrated concepts for realizing doping-free Tungsten Diselenide (WSe2) complementary metal-oxide-semiconductor (CMOS) inverter by developing alloys and compound metals used as source/drain (S/D) contacts. Aluminum – scandium alloy (AlSc) and tungsten oxide (WOx)-based S/D contacts enable efficient electron and hole injection into WSe2 for n-type and p-type FET operation because the work function (WF) of AlSc and WOx are aligned to neighboring the conduction and valence band edge of WSe2, respectively. A dual-gate bias architecture is used to improve electrical characteristics of FETs and enhance CMOS inverter performance after device fabrication. By utilizing AlSc and WOx-based S/D contacts in conjunction with the dual-gate bias architecture, our fabricated WSe2 CMOS inverter realized a higher gain at $\text{V}_{\mathrm{ dd}}$ of 1 V or higher than those in the literatures. Furthermore, the fabricated WSe2 CMOS inverter is operated at a power supply voltage ( $\text{V}_{\mathrm{ dd}}$ ) of as low as 0.5 V. This study paves the way towards research and development of transition metal dichalcogenides-based devices and circuits. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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