Metal–Semiconductor Behavior along the Line of Stacking Order Change in Gated Multilayer Graphene

Autor:	Włodzimierz Jaskólski
Jazyk:	angličtina
Rok vydání:	2024
Předmět:	multilayer graphene topological states defects in graphene Technology Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Zdroj:	Materials, Vol 17, Iss 8, p 1915 (2024)
Druh dokumentu:	article
ISSN:	1996-1944
DOI:	10.3390/ma17081915
Popis:	We investigated gated multilayer graphene with stacking order changes along the armchair direction. We consider that some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the corresponding direction in the k-space, so the topological gapless states from different valleys also overlap. However, these states strongly interact and split due to atomic-scale defects caused by the broken layers, yielding an effective energy gap. We find that for some gate voltages, the gap states cross and the metallic behavior along the stacking domain wall can be restored. In particular cases, a flat band appears at the Fermi energy. We show that for small variations in the gate voltage, the charge occupying this band oscillates between the outer layers.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/78035922b9224b92a4f982f9c7b6e93d Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF Plný text ve formátu HTML
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