| Autor: |
Ankit Kumar Pandey, Rikmantra Basu, Harshvardhan Kumar, Guo-En Chang |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 7, Pp 118-126 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2018.2884253 |
| Popis: |
We present a comprehensive analysis of practical p-n-p Ge/Ge1-xSnx/Ge heterojunction phototransistors (HPTs) for design optimization for efficient infrared detection. Our design includes a Ge1-xSnx narrow-bandgap semiconductor as the active layer in the base layer, enabling extension of the photodetection range from near-infrared to mid-infrared to perform wide-range infrared detection. We calculate the current gain, signal-to-noise ratio (SNR), and optical responsivity and investigate their dependences on the structural parameters to optimize the proposed Ge1-xSnx p-n-p HPTs. The results show that the SNR is strongly dependent on the operation frequency and that the introduction of Sn into the base layer can improve the SNR in the high-frequency region. In addition, the current gain strongly depends on the Sn content in the Ge1-xSnx base layer, and a Sn content of 6%-9% maximizes the optical responsivity achievable in the infrared range. These results provide useful guidelines for designing and optimizing practical p-n-p Ge1-xSnx HPTs for high-performance infrared photodetection. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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