Realisation of High-Frequency DRO Oscillators with Mosfet Transistors for Sub-MMWAVE Band

Autor: Jurík Patrik, Galajda Pavol, Sokol Miroslav
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Acta Electrotechnica et Informatica, Vol 24, Iss 2, Pp 8-12 (2024)
Druh dokumentu: article
ISSN: 1338-3957
DOI: 10.2478/aei-2024-0005
Popis: In high-frequency electronics, optimizing RF oscillators performance is essential, especially as applications reach into wide frequency bands. This article describes proposed clock generators for UWB sensor systems based on oscillators with dielectric resonator (DRO). Evaluation boards with different sizes of microstrip conductors were developed and tested, based on which new versions of boards were created. Improvements were made to integrate the DRO into a shielded box to ensure minimal external interference. The final designs demonstrated stable operation with low phase noise λ (1 MHz) = -108.805 dBc at fc = 21.732 GHz, sufficient power (3.65 dBm) and low power consumption(56 mW).
Databáze: Directory of Open Access Journals