| Autor: |
Miguel Franco, Asal Kiazadeh, Jonas Deuermeier, S. Lanceros-Méndez, Rodrigo Martins, Emanuel Carlos |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Scientific Reports, Vol 14, Iss 1, Pp 1-11 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2045-2322 |
| DOI: |
10.1038/s41598-024-58228-y |
| Popis: |
Abstract Solution-based memristors deposited by inkjet printing technique have a strong technological potential based on their scalability, low cost, environmentally friendlier processing by being an efficient technique with minimal material waste. Indium-gallium-zinc oxide (IGZO), an oxide semiconductor material, shows promising resistive switching properties. In this work, a printed Ag/IGZO/ITO memristor has been fabricated. The IGZO thickness influences both memory window and switching voltage of the devices. The devices show both volatile counter8wise (c8w) and non-volatile 8wise (8w) switching at low operating voltage. The 8w switching has a SET and RESET voltage lower than 2 V and − 5 V, respectively, a retention up to 105 s and a memory window up to 100, whereas the c8w switching shows volatile characteristics with a low threshold voltage (Vth |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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