| Autor: |
Yong Zhang, Tongshuai Zhu, Haijun Bu, Zixiu Cai, Chuanying Xi, Bo Chen, Boyuan Wei, Dongjing Lin, Hangkai Xie, Muhammad Naveed, Xiaoxiang Xi, Fucong Fei, Haijun Zhang, Fengqi Song |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 10, Iss 9, Pp 095314-095314-8 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0015490 |
| Popis: |
Large unsaturated magnetoresistance (XMR) with magnitude ∼103% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass measurements, consistent with our first-principles calculations. With the detailed Hall measurements performed, our two-band model analysis exhibits an imperfect density ratio nh/ne ≈ 0.9 at T < 20 K, which suggests that the carrier compensations account for the XMR in TaSe3. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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