| Autor: |
Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 11, Iss 3, Pp 035319-035319-7 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0046237 |
| Popis: |
(AlxGa1−x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1−x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1−x)2O3. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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