| Autor: |
Ankit Sirohi, Chitrakant Sahu, Jawar Singh |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
IEEE Access, Vol 7, Pp 141810-141816 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2019.2937444 |
| Popis: |
In this paper, we investigated the performance of a dopingless (DL) double gate fieldeffect transistor (DL-DGFET) for ultra-low power (ULP) analog/RF applications. It is observed that the source/drain metal electrode work-function engineering in DL-DGFET yields improved analog/RF performance as compared to underlap inversion mode (IM) and junctionless (JL) DGFETs. The DL-DGFET exhibits superior electrostatic control, low threshold voltage variability, simpler fabrication process, and comparable ON state current as compared to IM- and JL-DGFETs. In addition, the DL-DGFET alleviates the inherent contradictory trade-off between gain and bandwidth by exhibiting the simultaneous improvement in intrinsic voltage gain (Avo) and unity gain cutoff frequency (fT). The well calibrated TCAD simulation results of the DL-DGFET show a minimum noise figure (NFmin) 1.27 times and 2.29 times less than the IM and JL-DGFET. At gate overdrive voltage of 0.1 V, the DL-DGFET achieves 5.08 times fT and 5.86 times maximum oscillation frequency (fMAX) along with 3.59 times Avo in comparison to JL-DGFET. From simulation results, it is evident that the dopingless FET is a promising candidate for ultra-low power applications of analog and radio frequency (RF) domains. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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