| Autor: |
Abdelrahman Z. Al-Attili, Daniel Burt, Tasmiat Rahman, Zuo Li, Naoki Higashitarumizu, Frederic Y. Gardes, Yasuhiko Ishikawa, Shinichi Saito |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
APL Photonics, Vol 9, Iss 5, Pp 056104-056104-10 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2378-0967 |
| DOI: |
10.1063/5.0203305 |
| Popis: |
Various excitation-induced loss mechanisms have been identified during the development of direct-gap semiconductor lasers. Recently, indirect-gap laser sources, particularly germanium (Ge) or GeSn based, have emerged due to silicon industry compatibility. Tensile strain is crucial for optical gain or low-threshold room-temperature operation in such media. This study investigates an excitation-induced optical loss mechanism of mechanical origin in Ge-based micro-cavities with all-around stressor layers, a popular platform for strain-engineered laser sources. Using Raman spectroscopy, photoluminescence, and simulations, we find that excitation lowers the optical gain by altering the strain profile. Heating causes Ge micro-cavities to expand within a constraining stressor layer, inducing compressive strain, which is explained by the mismatch in thermal expansion coefficients. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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