Gate-tunable metafilm absorber based on indium silicon oxide
| Autor: | Zhao Hongwei, Zhang Ran, Chorsi Hamid T., Britton Wesley A., Chen Yuyao, Iyer Prasad P., Schuller Jon A., Negro Luca Dal, Klamkin Jonathan |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Nanophotonics, Vol 8, Iss 10, Pp 1803-1810 (2019) |
| Druh dokumentu: | article |
| ISSN: | 2192-8606 2192-8614 2019-0190 |
| DOI: | 10.1515/nanoph-2019-0190 |
| Popis: | In this work, reconfigurable metafilm absorbers based on indium silicon oxide (ISO) were investigated. The metafilm absorbers consist of nanoscale metallic resonator arrays on metal-insulator-metal (MIM) multilayer structures. The ISO was used as an active tunable layer embedded in the MIM cavities. The tunable metafilm absorbers with ISO were then fabricated and characterized. A maximum change in the reflectance of 57% and up to 620 nm shift in the resonance wavelength were measured. |
| Databáze: | Directory of Open Access Journals |
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