Enhanced thermoelectric performance of In-substituted GeSb6Te10 with homologous structure

Autor: Atsuko Kosuga, Kazuki Nakai, Mie Matsuzawa, Yousuke Fujii, Ryoji Funahashi, Takuya Tachizawa, Yoshiki Kubota, Kouichi Kifune
Jazyk: angličtina
Rok vydání: 2014
Předmět:
Zdroj: APL Materials, Vol 2, Iss 8, Pp 086102-086102-7 (2014)
Druh dokumentu: article
ISSN: 2166-532X
DOI: 10.1063/1.4893236
Popis: We studied the crystal structure and thermoelectric properties of polycrystalline GeInxSb6−xTe10 (x = 0, 0.18, 0.3, and 0.6). Rietveld and Le Bail analyses showed that all compositions crystallized in trigonal structures with a 51-layer period. Substituting In decreased both the lattice and electronic thermal conductivity, as well as markedly increased the Seebeck coefficient. We ascribed this increase to increases in the effective mass of the carriers, likely caused by the formation of additional energy states near the Fermi level. In GeIn0.6Sb5.4Te10, we found a maximum ZT of 0.75 at 710 K, 1.9 times higher than that of GeSb6Te10.
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