The influence of high ionizing dose rate on CMOS IC radiation hardness used in da-ta transmission elements
| Autor: | Vladislav D. Kalashnikov, Alexey Yu. Egorov, Armen V. Sogoyan, Anastasia V. Ulanova, Andrey B. Karakozov, Pavel A. Balamutov |
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| Jazyk: | English<br />Russian |
| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Безопасность информационных технологий, Vol 27, Iss 3, Pp 98-103 (2020) |
| Druh dokumentu: | article |
| ISSN: | 2074-7128 2074-7136 |
| DOI: | 10.26583/bit.2020.3.09 |
| Popis: | In this work, the effect of the irradiation intensity on the radiation hardness of CMOS integrated circuits (ICs) was studied. We investigated 3 types of ICs manufactured according to design rules from 0.8 to 3 microns, and used in various information transmission systems: 1586IN4, HEF4093BT and MC14504B. The U-31/33 accelerator of electrons has been used for the study in both gamma-ray mode (for moderate intensity) and pulse electron generation mode (for high intensity). As a result, it was revealed that an increase in the intensity of exposure by 4 orders of magnitude might result in a radiation hardness decrease up to factor of 30. This circumstance has to be taken into account when testing CMOS ICs for radiation hardness to high intensity effects. The obtained experimental data confirm theoretical understanding of the influence of increased irradiation intensity on the dose hardness of CMOS ICs. |
| Databáze: | Directory of Open Access Journals |
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