Diode Physical Parameters for HEXFETs Characterization of Dose Effect
| Autor: | E. Bendada, K. Raïs |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1998 |
| Předmět: | |
| Zdroj: | Active and Passive Electronic Components, Vol 21, Iss 3, Pp 199-208 (1998) |
| Druh dokumentu: | article |
| ISSN: | 0882-7516 1563-5031 |
| DOI: | 10.1155/1998/26372 |
| Popis: | Modeling techniques of P-N junctions have been applied for studying the physical parameters in metal-oxide semiconductor field-effect transistor structures. A parameter extraction method provides a precise description of the changes in conduction processes due to radiation damages in the integral body-drain junction. A large increase of the ideality factor and series resistance is related to radiation-induced defects. |
| Databáze: | Directory of Open Access Journals |
| Externí odkaz: |
|
Plný text