Autor: |
Xingfei Zhang, Yiyun Zhang, Dong Pan, Xiaoyan Yi, Jianhua Zhao, Jinmin Li |
Jazyk: |
angličtina |
Rok vydání: |
2021 |
Předmět: |
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Zdroj: |
Frontiers in Physics, Vol 9 (2021) |
Druh dokumentu: |
article |
ISSN: |
2296-424X |
DOI: |
10.3389/fphy.2021.725680 |
Popis: |
One-dimensional, direct, and narrow band gap indium arsenide (InAs) nanowires (NWs) have been emerging with great potentials for the next-generation wide-spectrum photodetectors. In this study, metal–semiconductor–metal (MSM) structure InAs NW-based photodetectors were fabricated by transferring MBE-grown NWs onto a sapphire substrate via a mechanical stamping method. These NW detectors exhibit strong negative photoconductive (NPC) effects, which are likely caused by the carrier dynamics in the “core-shell” structure of the NWs. Specifically, under the irradiation of a 405 nm violet laser, the maximum Idark/Ilight ratio reaches ∼102 and the NPC gain reaches 105 at a low bias voltage of 0.2 V. At room temperature, the rise and decay times of InAs NW devices are 0.005 and 2.645 s, respectively. These InAs NW devices with a high Idark/Ilight ratio and NPC gain can be potentially used in the field of vis/near-IR light communication in the future. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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