The elasticity and piezoelectricity of AlN containing charged vacancies

Autor:	Qiaoya Lv, Jian Qiu, Quan Wen
Jazyk:	angličtina
Rok vydání:	2024
Předmět:	AlN charged vacancy piezoelectricity elasticity DFT calculation Materials of engineering and construction. Mechanics of materials TA401-492 Applied optics. Photonics TA1501-1820
Zdroj:	International Journal of Optomechatronics, Vol 18, Iss 1 (2024)
Druh dokumentu:	article
ISSN:	15599612 1559-9620 1559-9612
DOI:	10.1080/15599612.2024.2332242
Popis:	AbstractWurtzite aluminum nitride (w-AlN) piezoelectric film plays a key role in modern MEMS actuators and sensors. Density functional theory can be used to predict the elastic and piezoelectric properties of AlN containing various charged vacancies, thereby obtaining methods for improving the piezoelectric properties. The theoretical investigations suggested that the Young’s modulus of defectants are smaller than that of intrinsic AlN, indicating that charged vacancies can effectively improve the elastic properties of AlN. A high piezoelectric coefficient d33 values were obtained in [Formula: see text] [Formula: see text] and [Formula: see text] that may be a cause of the non-symmetrical charges assignation. This work suggests that the elasticity and piezoelectricity of AlN films can be effectively enhancing using the introduction of charged vacancies.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/73edcfdb82f64561a957803a55b0fd83 Zobrazit plný text záznamu View record in DOAJ