Reducing the Short Channel Effect of Transistors and Reducing the Size of Analog Circuits

Autor:	Zhaopeng Wei, Gilles Jacquemod, Yves Leduc, Emeric de Foucauld, Jerome Prouvee, Benjamin Blampey
Jazyk:	angličtina
Rok vydání:	2019
Předmět:	Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Active and Passive Electronic Components, Vol 2019 (2019)
Druh dokumentu:	article
ISSN:	0882-7516 1563-5031
DOI:	10.1155/2019/4578501
Popis:	Analog integrated circuits never follow the Moore’s Law. This is particularly right for passive component. Due to the Short Channel Effect, we have to implement longer transistor, especially for analog cell. In this paper, we propose a new topology using some advantages of the FDSOI (Fully Depleted Silicon on Insulator) technology in order to reduce the size of analog cells. First, a current mirror was chosen to illustrate and validate a new design. Measured currents, with 35nm transistor length, have validated our new cross-coupled back-gate topology. Then, a VCRO (Voltage Controlled Ring Oscillator) based on complementary inverter is also used to remove passive components reducing the size of the circuit.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/73bcb8515dc1463dbd1ad7f806d71cfd Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF Plný text ve formátu HTML
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