| Autor: |
Haili Li, Mitsuhiro Matsumoto |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 12, Iss 3, Pp 035309-035309-9 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0079701 |
| Popis: |
To investigate the electron transport properties of hydrogenated amorphous silicon (a-Si:H), a series of quantum simulations and electron transport analyses were performed. The target system is a nano-scale junction of a-Si:H with various hydrogen concentrations sandwiched between two metal electrodes. The density functional based tight binding simulation was conducted to obtain the electronic structure, and the non-equilibrium Green’s function method was adopted to evaluate the electron transmission coefficient and the electric current under a bias field. It is confirmed that the hydrogen atoms passivate a part of defects in amorphous silicon, but the remaining defects realize the energy states in the bandgap; the p orbitals of silicon atoms mainly contribute to the electron transmission. The transport behavior is greatly affected by the hydrogen concentration. The interface between a-Si:H and the metal electrodes also influences the transport behavior through changing the spatial charge density inside the a-Si:H. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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