| Autor: |
Liting Liu, Yang Chen, Long Chen, Biao Xie, Guoli Li, Lingan Kong, Quanyang Tao, Zhiwei Li, Xiaokun Yang, Zheyi Lu, Likuan Ma, Donglin Lu, Xiangdong Yang, Yuan Liu |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2041-1723 |
| DOI: |
10.1038/s41467-023-44519-x |
| Popis: |
Abstract Two-dimensional (2D) semiconductors hold great promises for ultra-scaled transistors. In particular, the gate length of MoS2 transistor has been scaled to 1 nm and 0.3 nm using single wall carbon nanotube and graphene, respectively. However, simultaneously scaling the channel length of these short-gate transistor is still challenging, and could be largely attributed to the processing difficulties to precisely align source-drain contact with gate electrode. Here, we report a self-alignment process for realizing ultra-scaled 2D transistors. By mechanically folding a graphene/BN/MoS2 heterostructure, source-drain metals could be precisely aligned around the folded edge, and the channel length is only dictated by heterostructure thickness. Together, we could realize sub-1 nm gate length and sub-50 nm channel length for vertical MoS2 transistor simultaneously. The self-aligned device exhibits on-off ratio over 105 and on-state current of 250 μA/μm at 4 V bias, which is over 40 times higher compared to control sample without self-alignment process. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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