| Autor: |
Chao Wei, Youren Yu, Ziyun Wang, Lin Jiang, Zhongming Zeng, Jia Ye, Xihua Zou, Wei Pan, Xiaojun Xie, Lianshan Yan |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Light: Advanced Manufacturing, Vol 4, Iss 3, Pp 263-271 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2689-9620 |
| DOI: |
10.37188/lam.2023.030 |
| Popis: |
With the advantages of large electro-optical coefficient, wide transparency window, and strong optical confinement, thin-film lithium niobate (TFLN) technique has enabled the development of various high-performance optoelectronics devices, ranging from the ultra-wideband electro-optic modulators to the high-efficient quantum sources. However, the TFLN platform does not natively promise lasers and photodiodes. This study presents an InP/InGaAs modified uni-traveling carrier (MUTC) photodiodes heterogeneously integrated on the TFLN platform with a record-high 3-dB bandwidth of 110 GHz and a responsivity of 0.4 A/W at a 1,550-nm wavelength. It is implemented in a wafer-level TFLN-InP heterogeneous integration platform and is suitable for the large-scale, multi-function, and high-performance TFLN photonic integrated circuits. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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