| Autor: |
Ersin Bahceci, Brian Enders, Zain Yamani, Serekbol Tokmoldin, Aman Taukenov, Laila Abuhassan, Munir Nayfeh |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 9, Iss 5, Pp 055228-055228-7 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5096659 |
| Popis: |
We use silicon having multiple crystalline orientation domains and high metal doping in metal assisted chemical etching (MACEtch) in HF/H2O2. In device-quality silicon, MACEtch produces high-aspect ratio anisotropic (1-D) structures (wires, columns, pores or holes) and to a lesser degree non-high-aspect ratio luminescent (0-D) nano structures. While the 1-D structure symmetry is understood in terms of crystallography axis-dependent etching, predominantly along the direction, the isotropic 0-D spherical symmetry etching is not understood. We observe in silicon having multiple crystalline orientation domains formation of metal tips (needles or whiskers) of diameters as small as 2-3 nm that bridge the metal to silicon and cause AFM/STM-like nanofabrication, producing 0-D mounds, indentations, or clusters. The formation of sharp needles can be understood in terms of charge injection/electric breakdown between metal clusters and silicon due to charge build-up. Silicon with high degree of impurities as well as with multiple crystalline orientation domains allow imaging these effects using electron spectroscopy without cross sectional cuts. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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