Autor: |
Akshay Agarwal, Chung-Soo Kim, Richard Hobbs, Dirk van Dyck, Karl K. Berggren |
Jazyk: |
angličtina |
Rok vydání: |
2017 |
Předmět: |
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Zdroj: |
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017) |
Druh dokumentu: |
article |
ISSN: |
2045-2322 |
DOI: |
10.1038/s41598-017-01466-0 |
Popis: |
Abstract Progress in nanofabrication technology has enabled the development of numerous electron optic elements for enhancing image contrast and manipulating electron wave functions. Here, we describe a modular, self-aligned, amplitude-division electron interferometer in a conventional transmission electron microscope. The interferometer consists of two 45-nm-thick silicon layers separated by 20 μm. This interferometer is fabricated from a single-crystal silicon cantilever on a transmission electron microscope grid by gallium focused-ion-beam milling. Using this interferometer, we obtain interference fringes in a Mach-Zehnder geometry in an unmodified 200 kV transmission electron microscope. The fringes have a period of 0.32 nm, which corresponds to the [1̄1̄1] lattice planes of silicon, and a maximum contrast of 15%. We use convergent-beam electron diffraction to quantify grating alignment and coherence. This design can potentially be scaled to millimeter-scale, and used in electron holography. It could also be applied to perform fundamental physics experiments, such as interaction-free measurement with electrons. |
Databáze: |
Directory of Open Access Journals |
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