Floquet engineering of binding in doped and photo-doped Mott insulators

Autor: Madhumita Sarkar, Zala Lenarčič, Denis Golež
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Physical Review Research, Vol 6, Iss 3, p 033331 (2024)
Druh dokumentu: article
ISSN: 2643-1564
DOI: 10.1103/PhysRevResearch.6.033331
Popis: We investigate the emergence of bound states in chemically and photo-doped Mott insulators, mediated by spin and η-pairing fluctuations within both 2-leg ladder and 2D systems. To effectively describe the photo and chemically doped state on the same footings, we employ the Schrieffer-Wolff transformation, resulting in a generalized t-J model. Our results demonstrate that the binding energies and localization length in the chemically and photo-doped regimes are comparable, with η-pairing fluctuations not playing a crucial role. Furthermore, we show that manipulating the binding is possible through external periodic driving, a technique known as Floquet engineering, leading to significantly enhanced binding energies. We also roughly estimate the lifetime of photo-doped states under periodic driving conditions based on the Fermi golden rule. Lastly, we propose experimental protocols for realizing Hubbard excitons in cold-atom experiments.
Databáze: Directory of Open Access Journals