| Autor: |
Takaya Sugiura, Kazuma Yamashita, Nobuhiko Nakano |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
IEEE Open Journal of Power Electronics, Vol 5, Pp 683-691 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2644-1314 |
| DOI: |
10.1109/OJPEL.2024.3400291 |
| Popis: |
This study discusses the effect of stress on 4H-silicon carbide (4H-SiC) power diodes using numerical simulations. Two power diodes were evaluated; namely, a 600 V PiN diode and 1.8 kV junction barrier Schottky (JBS) diode. Stress changes the carrier mobilities in the material of the PiN diode of a bipolar diode; that is, the mobility is enhanced by the piezoresistive effect, which minimizes the on-resistance or leakage current. The simulation results demonstrate that compressive stress can have a positive effect on the device operation, particularly in p$^+$-substrate power diodes. Regarding the JBS diode, the GPa-order tensile stress positively effects both forward and reverse characteristics. A cantilever structure is suitable for JBS diodes, and press-pack packaging for PiN diodes can enhance the device characteristics. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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