| Autor: |
Joris More-Chevalier, Stanislav Cichoň, Jiří Bulíř, Morgane Poupon, Pavel Hubík, Ladislav Fekete, Ján Lančok |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 9, Iss 1, Pp 015317-015317-7 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5056245 |
| Popis: |
Scandium nitride (ScN) is a rocksalt-structure semiconductor that has attracted attention for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices. ScN nanolayers of 30 nm thickness were deposited on MgO (001) substrate by reactive sputtering. Epitaxial growth of ScN(002) was observed with a mosaicity between grains around the {002} growth axis. Both direct band gaps theoretically predicted were measured at 2.59 eV and 4.25 eV for the energy gaps between the valence band and the conductance band at the X point and the Γ point respectively. Electrical and optical properties were observed to be strongly influenced by the crystalline order and the carrier concentration. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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