| Autor: |
Aibin Yan, Shaojie Wei, Yu Chen, Zhengzheng Fan, Zhengfeng Huang, Jie Cui, Patrick Girard, Xiaoqing Wen |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Micromachines, Vol 13, Iss 11, p 1802 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2072-666X |
| DOI: |
10.3390/mi13111802 |
| Popis: |
In aerospace environments, high reliability and low power consumption of chips are essential. To greatly reduce power consumption, the latches of a chip need to enter the power down operation. In this operation, employing non-volatile (NV) latches can retain circuit states. Moreover, a latch can be hit by a radiative particle in the aerospace environment, which can cause a severe soft error in the worst case. This paper presents a NV-latch based on resistive random-access memories (ReRAMs) for NV and robust applications. The proposed NV-latch is radiation-hardened with low overhead and can restore values after power down operation. Simulation results demonstrate that the proposed NV-latch can completely provide radiation hardening capability against single-event upsets (SEUs) and can restore values after power down operation. The proposed NV-latch can reduce the number of transistors in the storage cells by 50% on average compared with the other similar solutions. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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