Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP

Autor:	Hakkarainen Teemu, Schramm Andreas, Tukiainen Antti, Ahorinta Risto, Toikkanen Lauri, Guina Mircea
Jazyk:	angličtina
Rok vydání:	2010
Předmět:	Molecular beam epitaxy III-V semiconductors Quantum dots Ordering InAs GaInP Materials of engineering and construction. Mechanics of materials TA401-492
Zdroj:	Nanoscale Research Letters, Vol 5, Iss 12, Pp 1892-1896 (2010)
Druh dokumentu:	article
ISSN:	1931-7573 1556-276X
DOI:	10.1007/s11671-010-9747-2
Popis:	Abstract We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microscopy, and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP. Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/e70a07b065574b9893ce0ea4587f056c Zobrazit plný text záznamu Full text from SpringerLink View record in DOAJ