| Autor: |
Shixiong Zhang, Ning Tang, Xiaoyue Zhang, Xingchen Liu, Lei Fu, Yunfan Zhang, Teng Fan, Zhenhao Sun, Fentao Wang, Weikun Ge, Bo Shen |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Fundamental Research, Vol 1, Iss 6, Pp 656-660 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2667-3258 |
| DOI: |
10.1016/j.fmre.2021.09.017 |
| Popis: |
Spin relaxation induced by the interfacial effects in GaN/Al0.25Ga0.75N heterostructures was carefully investigated using a photon-energy-dependent time-resolved Kerr rotation spectrum. The existence of the interfacial localized states with potential fluctuations at the GaN/AlGaN heterointerface leads to photoluminescence peaks showing blue and S-shaped shifts owing to the excitation power and temperature, respectively. Photoexcited electrons in the localized states show a spin relaxation time longer than 1 ns because of the suppression of the D'yakonov–Perel’ (DP) scattering, while the spin relaxation time of free electrons was approximately only 10 ps because of the giant Rashba spin-orbit coupling induced by the interfacial polarization field under the framework of the DP scattering mechanism. Furthermore, it is found that the high electron mobility at the heterointerface results in a long spin diffusion length of 300 nm at high temperatures, which is promising for the development of GaN-based spintronic devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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