Bandgap variation in semiconductor thin films of the solid solution (CdTe)1-x(In2Te3)x deposited by RF sputtering

Autor: Miguel Meléndez-Lira, Sergio Jiménez-Sandoval, Martin Zapata-Torres, Alejandra García-Sotelo, Eric Noé Hernández Rodríguez, Arturo Hernández-Hernández
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Materials Research Express, Vol 11, Iss 4, p 045901 (2024)
Druh dokumentu: article
ISSN: 2053-1591
DOI: 10.1088/2053-1591/ad3f78
Popis: (CdTe) _1-x (In _2 Te _3 ) _x films, with 0.1 ≤ x ≤ 1, were deposited by radio frequency sputtering on glass substrates employing different targets, prepared for each composition. The x-ray diffractograms were consistent with substitutional In incorporation into the CdTe lattice up to a value of x = 0.2. For higher In contents, the films presented structural disorder without reaching full amorphous characteristics. For x = 1, corresponding to In _2 Te _3 , preferential growth was observed. The bandgap of the solid solution varied between 1.46 and 1.2 eV, reaching a maximum of 1.58 eV for x = 0.3. For both end binary compounds the random incorporation of a third chemical element produced a significant broadening of the Raman modes consistent with a reduction of the lifetime of the optical phonons. The electrical resistivity was dependent on the Cd concentration reaching a minimum for x = 0.8.
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