GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy

Autor: M. R. Lef, K. F. Yarn, C. C. Chen, W. R. Chang
Jazyk: angličtina
Rok vydání: 2001
Předmět:
Zdroj: Active and Passive Electronic Components, Vol 24, Iss 1, Pp 1-11 (2001)
Druh dokumentu: article
ISSN: 0882-7516
1563-5031
DOI: 10.1155/2001/29392
Popis: A new S-shaped negative differential resistance (NDR) switching device, prepared by molecular beam epitaxy (MBE), has been successfully developed in a GaAs double triangular barrier structure. Symmetrical bidirectional S-shaped NDR characteristics are observed experimentally. The bidirectional current-voltage (I–V) characteristics exhibit a new type of NDR caused by an avalanche multiplication process in reverse biased base-collector region and barrier redistribution. Under a base current injection with respect to the cathode, the device exhibits a conventional transistor with a current gain of 1.2 at room temperature. The experimentally electrical results can be easily understood by an equivalent circuit. In addition, a new optoelectronic switching device is also proposed which may have the potential for bidirectional wave length emission.
Databáze: Directory of Open Access Journals
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