Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs

Autor:	T. I. Mosiuk, R. M. Vernydub, P. G. Lytovchenko, Yu. B. Myroshnichenko, D. P. Stratilat, V. P. Tartachnyk, V. V. Shlapatska
Jazyk:	English<br />Russian<br />Ukrainian
Rok vydání:	2023
Předmět:	ingan light emitting diode negative differential resistance current-voltage characteristics electroluminescence characteristics. Atomic physics. Constitution and properties of matter QC170-197
Zdroj:	Âderna Fìzika ta Energetika, Vol 24, Iss 1, Pp 27-33 (2023)
Druh dokumentu:	article
ISSN:	1818-331X 2074-0565
DOI:	10.15407/jnpae2023.01.027
Popis:	We studied light-emitting diodes (LEDs) with quantum dots маde on the basis of a solid solution of In0.21Ga0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 ÷ 300 K. On the current-voltage characteristics in the range of 77 ÷ 150 K, areas of negative differential resistance, as well as a fine structure of radiation spectra, were detected. The results of the influence of electron irradiation (Ee = 2 MeV) on electroluminescence characteristics intensity and quantum yield of the studied samples are presented; the features of the temperature dependence of the glow intensity of irradiated LEDs were revealed.
Databáze:	Directory of Open Access Journals
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