Autor: |
Mira Naftaly, Steve Chick, Guy Matmon, Ben Murdin |
Jazyk: |
angličtina |
Rok vydání: |
2021 |
Předmět: |
|
Zdroj: |
Applied Sciences, Vol 11, Iss 2, p 487 (2021) |
Druh dokumentu: |
article |
ISSN: |
2076-3417 |
DOI: |
10.3390/app11020487 |
Popis: |
Refractive indices of high resistivity Si and Ge were measured at temperatures between 4–296 K and at frequencies between 4.2–7.7 THz using a Fourier-transform spectrometer (FTS) in transmission mode. A phenomenological model of the temperature dependence of the refractive index is proposed. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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