Refractive Indices of Ge and Si at Temperatures between 4–296 K in the 4–8 THz Region

Autor: Mira Naftaly, Steve Chick, Guy Matmon, Ben Murdin
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Applied Sciences, Vol 11, Iss 2, p 487 (2021)
Druh dokumentu: article
ISSN: 2076-3417
DOI: 10.3390/app11020487
Popis: Refractive indices of high resistivity Si and Ge were measured at temperatures between 4–296 K and at frequencies between 4.2–7.7 THz using a Fourier-transform spectrometer (FTS) in transmission mode. A phenomenological model of the temperature dependence of the refractive index is proposed.
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