Role of CdTe Interface Structure on CdS/CdTe Photovoltaic Device Performance
| Autor: | Niva K. Jayswal, Dipendra Adhikari, Indra Subedi, Ambalanath Shan, Nikolas J. Podraza |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2023 |
| Předmět: |
glancing angle deposition (GLAD)
thin film solar cell GLAD CdTe interlayer interface tailoring Technology Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 |
| Zdroj: | Materials, Vol 16, Iss 20, p 6812 (2023) |
| Druh dokumentu: | article |
| ISSN: | 1996-1944 |
| DOI: | 10.3390/ma16206812 |
| Popis: | Glancing angle deposition (GLAD) of CdTe can produce a cubic, hexagonal, or mixed phase crystal structure depending upon the oblique deposition angles (Φ) and substrate temperature. GLAD CdTe films are prepared at different Φ at room temperature (RT) and a high temperature (HT) of 250 °C and used as interlayers between the n-type hexagonal CdS window layer and the p-type cubic CdTe absorber layer to investigate the role of interfacial tailoring at the CdS/CdTe heterojunction in photovoltaic (PV) device performance. The Φ = 80° RT GLAD CdTe interlayer and CdS both have the hexagonal structure, which reduces lattice mismatch at the CdS/CdTe interface and improves electronic quality at the heterojunction for device performance optimization. The device performance of HT CdS/CdTe solar cells with Φ = 80° RT with 50 to 350 nm thick GLAD CdTe interlayers is evaluated in which a 250 nm interlayer device shows the best device performance with a 0.53 V increase in open-circuit voltage and fill-factor product and a 0.73% increase in absolute efficiency compared to the HT baseline PV device without an interlayer. |
| Databáze: | Directory of Open Access Journals |
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