| Autor: |
Woo Young Choi, Gyuhan Yoon, Woo Young Chung, Younghoon Cho, Seongun Shin, Kwang Ho Ahn |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Micromachines, Vol 10, Iss 4, p 256 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2072-666X |
| DOI: |
10.3390/mi10040256 |
| Popis: |
A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage capacitor with a complex three-dimensional structure. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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