Characterization of Unipolar Power Devices Technology
| Autor: | Ladislav Harmatha, Milan Tapajna, Pavol Pisecny, Lubica Stuchlikova, Daniel Donoval |
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| Jazyk: | angličtina |
| Rok vydání: | 2004 |
| Předmět: | |
| Zdroj: | Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 305-307 (2004) |
| Druh dokumentu: | article |
| ISSN: | 1336-1376 1804-3119 |
| Popis: | The quality of momentus technological steps in unipolar power devices manufactoring was examine by means of capacitance and current measurements using a metal-oxide-semiconductor capacitors (MOS-C). From the low- (If) and high-frequency (hf) capacitance-voltage (C-V) curves, the effective defect charge and energy distribution of Si-SiO2 interface trap density were extracted, respectively. performin non-steady capacitance-time (C-t) and the time domain constant-capacitance (cC-t) at well as deep level transient spectroscopy (DLTS) techniques we have analysed electrically active that generation parameters are mostly influenced by traps at the Si-SiO2 interface. Moreover, breakdown voltage measurement confirms high quality and homogeneity of thermal oxide. Low density of carrier traps was achieved by intrinsic gettering technique. |
| Databáze: | Directory of Open Access Journals |
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