High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors

Autor: Kim Sangsig, Choi Chang-Young, Lee Ji-Hoon, Koh Jung-Hyuk, Ha Jae-Geun, Koo Sang-Mo
Jazyk: angličtina
Rok vydání: 2010
Předmět:
Zdroj: Nanoscale Research Letters, Vol 5, Iss 11, Pp 1795-1799 (2010)
Druh dokumentu: article
ISSN: 1931-7573
1556-276X
DOI: 10.1007/s11671-010-9714-y
Popis: Abstract We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25–150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (−5.2 × 10−6).
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