| Autor: |
Hongpei Wang, Hao Dai, Menglu Lyu, Cheng Jiang, Shulong Lu, Ziyang Zhang |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Photonics, Vol 11, Iss 3, p 235 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2304-6732 |
| DOI: |
10.3390/photonics11030235 |
| Popis: |
Au nanoparticles (NPs) were designed to be embedded into III-V semiconductors to form Au/GaAs Schottky heterostructures, which were used as top-modified cover layers for quantum dot semiconductor saturable absorption mirrors (QD-SESAMs). By harnessing the distinctive localized surface plasmon resonance (LSPR) effect exhibited by Au NPs, a remarkable enhancement in photogenerated carrier concentration is achieved at the heterojunction interface. Consequently, this leads to a significant improvement in the nonlinear optical characteristics of the device. The modulation depth (MD) and saturation fluence of the device are optimized from the initial 2.2% and 16.1 MW/cm2 to 2.8% and 8.3 MW/cm2, respectively. Based on the optimized device, a Q-switched laser has been developed with an impressive output power of 17.61 mW and a single pulse energy of 274.9 nJ. These results unequivocally showcase the exceptional advantages offered by utilizing Au NPs to optimize the nonlinear optical characteristics of III-V semiconductor devices, thereby highlighting its immense potential for practical applications in various fields. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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