| Autor: |
Jintao Fu, Zhongmin Guo, Changbin Nie, Feiying Sun, Genglin Li, Shuanglong Feng, Xingzhan Wei |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
The Innovation, Vol 5, Iss 3, Pp 100600- (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2666-6758 |
| DOI: |
10.1016/j.xinn.2024.100600 |
| Popis: |
Internal photoemission is a prominent branch of the photoelectric effect and has emerged as a viable method for detecting photons with energies below the semiconductor bandgap. This breakthrough has played a significant role in accelerating the development of infrared imaging in one chip with state-of-the-art silicon techniques. However, the performance of these Schottky infrared detectors is currently hindered by the limit of internal photoemission; specifically, a low Schottky barrier height is inevitable for the detection of low-energy infrared photons. Herein, a distinct paradigm of Schottky infrared detectors is proposed to overcome the internal photoemission limit by introducing an optically tunable barrier. This device uses an infrared absorbing material-sensitized Schottky diode, assisted by the highly adjustable Fermi level of graphene, which subtly decouples the photon energy from the Schottky barrier height. Correspondingly, a broadband photoresponse spanning from ultraviolet to mid-wave infrared is achieved, with a high specific detectivity of 9.83 × 1010 cm Hz1/2 W−1 at 2,700 nm and an excellent specific detectivity of 7.2 × 109 cm Hz1/2 W−1 at room temperature under blackbody radiation. These results address a key challenge in internal photoemission and hold great promise for the development of the Schottky infrared detector with high sensitivity and room temperature operation. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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