Reaction Mechanism and Performance of Innovative 2D Germanane‐Silicane Alloys: SixGe1−xH Electrodes in Lithium‐Ion Batteries

Autor: Shuangying Wei, Tomáš Hartman, Stefanos Mourdikoudis, Xueting Liu, Gang Wang, Evgeniya Kovalska, Bing Wu, Jalal Azadmanjiri, Ruizhi Yu, Levna Chacko, Lukas Dekanovsky, Filipa M. Oliveira, Min Li, Jan Luxa, Saeed Jamali Ashtiani, Jincang Su, Zdeněk Sofer
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Advanced Science, Vol 11, Iss 24, Pp n/a-n/a (2024)
Druh dokumentu: article
ISSN: 2198-3844
DOI: 10.1002/advs.202308955
Popis: Abstract The adjustable structures and remarkable physicochemical properties of 2D monoelemental materials, such as silicene and germanene, have attracted significant attention in recent years. They can be transformed into silicane (SiH) and germanane (GeH) through covalent functionalization via hydrogen atom termination. However, synthesizing these materials with a scalable and low‐cost fabrication process to achieve high‐quality 2D SiH and GeH poses challenges. Herein, groundbreaking 2D SiH and GeH materials with varying compositions, specifically Si0.25Ge0.75H, Si0.50Ge0.50H, and Si0.75Ge0.25H, are prepared through a simple and efficient chemical exfoliation of their Zintl phases. These 2D materials offer significant advantages, including their large surface area, high mechanical flexibility, rapid electron mobility, and defect‐rich loose‐layered structures. Among these compositions, the Si0.50Ge0.50H electrode demonstrates the highest discharge capacity, reaching up to 1059 mAh g−1 after 60 cycles at a current density of 75 mA g−1. A comprehensive ex‐situ electrochemical analysis is conducted to investigate the reaction mechanisms of lithiation/delithiation in Si0.50Ge0.50H. Subsequently, an initial assessment of the c‐Li15(SixGe1‐x)4 phase after lithiation and the a‐Si0.50Ge0.50 phase after delithiation is presented. Hence, this study contributes crucial insights into the (de)lithiation reaction mechanisms within germanane‐silicane alloys. Such understanding is pivotal for mastering promising materials that amalgamate the finest properties of silicon and germanium.
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