| Autor: |
Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 7, Pp 444-452 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2019.2907306 |
| Popis: |
AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation. Al0.85Ga0.15N/Al0.7Ga0.3N (85/70) HEMTs were operated up to 500 °C in ambient causing only 58% reduction of dc current relative to 25 °C measurement. The low gate leakage current contributed to high gate voltage operation up to +10 V under Vds = 10 V, with ION/IOFF ratios of > 2 × 1011 and 3 × 106 at 25 and 500 °C, respectively. Gate-lag measurements at 100 kHz and 10% duty cycle were ideal and only slight loss of pulsed current at high gate voltages was observed. Low interfacial defects give rise to high quality pulsed characteristics and a low subthreshold swing value of 80 mV/dec at room temperature. Herein is an analysis of AlGaN-channel HEMTs and their potential future for high power and high temperature applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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